Comparison on electrical properties of pure Y2O3, bismuth doped Y2O3, zinc doped Y2O3, bismuth and zinc codoped Y2O3 prepared by sol-gel method

G. Bhavani, S. Ganesan, S. Selvasekarapandian

Abstract


Yttrium oxide is widely studied nowadays as a substitute for SiO2 which is a well-known dielectric material. The uniqueness of yttrium oxide is that it has a high melting point (2430 °C) which is higher than other host materials like alumina, zirconia and yttrium aluminium garnet. Hence an attempt was made to add the dopants, bismuth and zinc simultaneously to the yttrium oxide lattice and to study their properties as a dielectric material. Also the dependence of their electrical properties on structure, particle size and morphology is analysed. Pure Yttrium oxide, bismuth doped yttrium oxide, zinc doped yttrium oxide and bismuth and zinc codoped yttrium oxide samples of 0.5 weight percentage of yttrium precursor as dopant concentration are synthesized by simple precipitation technique, sol-gel method. Electrical properties of the samples are studied and a comparative study is done on the doped and codoped samples and it was found that codoped samples show better electrical properties compared with single dopant samples. 


Keywords


codoped; FTIR; dielectric; loss tangent

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