The Effect of Doping Concentrations on the Thickness of the Depletion Layer on Some Semiconductor Materials

Fatima Musa Lariski, Garba Babaji


In this work, the code “Poisson” written by Silsbee and Drager, developed at Cornell University was used to Simulate band bending and carrier concentrations in the inhomogenous semiconductors: Gallium nitride, Zinc oxide, Cadmium sulfide, Cadmium selenide, Cadmium telluride, Indium phosphide, Gallium arsenide and Silicon. The energy gap for these semiconductors is generally greater than 1eV. Simulation of doping concentrations was run on preset four (4) on the code “Poisson”. The effect of doping concentrations on the thickness of the depletion layer width and charge displacement of the semiconductor materials was obtained. The width of depletion layer decreases with increase in doping concentrations while increase in doping concentrations leads to increase in the charge displacement. The relationship between depletion layer width and the doping concentrations (from 1×1020 to 1×1016 cm-3 )   is best described by a power function of the  form . On the other hand, wide band gap results in increase in depletion layer width.


Poisson code; doping concentrations; depletion layer; charge displacement

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Bryan, R., "Simulations for solid state physics. An interactive teaching resource for students and teachers" edited by RH Silsbee and J. Dräger. Acta Crystallographica Section A, 54 (4), 516-516 (1998)

Fadel, M.T., S.A. Ahmed, and M.D. Abdallah, "Effect of doping layer concentration on optical absorption in light dependent resistance doped with Phosphors (p) and Iron (Fe) layer", Journal of Applied and Industrial Sciences, 2 (3) (2014).

Pierret, R.F. and G.W. Neudeck, Advanced semiconductor fundamentals. Vol. 6. (Pearson Education, Inc., 1987), p 1-5

AzoMaterials, Gallium Arsenide (GaAs) Semiconductors, (2013).

Khandaker, M.U., "High purity germanium detector in gamma-ray spectrometry", International Journal of Fundamental Physical Sciences, 1 (2), 42-46 (2011).

Mouthaan, T.J., Semiconductor devices explained: using active simulation. (J. Wiley, 1999).

Khan, A., Introduction to electrical, electronics and communication engineering. 2005: (Firewall Media, 2005), p 154

Saslow, W.M., Electricity, Magnetism, and Light. (Elsevier, 2002).

Hayt, W.H. and J.A. Buck, Engeneering Electromagnetics 8ed. (Mc Gramo-Hill., New York. , 2012), 8 ed, p.195-197

Crauder, B., B. Evans, and A. Noell, Functions and change: A modeling approach to college algebra. (Nelson Education, 2013), p330-335.


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