Effect of CIGS Layer Thickness and Bandgap on the Efficiency of Thin-Film Copper Indium Gallium Selenide (CIGS) Solar Cells Using GPVDM

Abstract

This study explores how CIGS absorber layer thickness and bandgap influenced the efficiency of Copper Indium Gallium Selenide (CIGS) thin-film solar cells through simulations carried out using the General-Purpose Photovoltaic Device Model (GPVDM). The unique properties of CIGS, including its tunable energy bandgap, are highlighted for optimal alignment with the solar spectrum. Through sets of simulation, optimal values are determined for thickness and bandgap. Results indicate an optimal thickness range (1.2 to 1.3 µm), striking a balance between absorption and recombination losses. Furthermore, an optimal bandgap range (between 1.261 eV and 1.596 eV) was identified, aligning photon absorption and energy losses for maximal efficiency. These findings underscore the nuanced optimization required for effective solar cell design, with implications for the advancement of renewable energy technologies.